From 10/25/2026 to 10/29/2026Calgary, Canada
CEA-Leti will participate in the 250th ECS Meeting in Calgary with 20 scientific contributions and 6 session Chairs, highlighting major research results in electronic materials and processing, electronic and photonic devices and systems, dielectric science and materials, and electrochemical/electroless deposition.
DISCOVER CEA-LETI’S MAJOR SCIENTIFIC RESULTS AT 250TH ECS MEETING
With 20 papers (18 as first author), the institute will present this year’s major scientific results at ECS, including the following topics:
Sunday, 25 October 202608:10 am - 08:40 amRoom 236(Level 2, BMO Centre)
C. Cardoux,P. Goulain,L. Bonin,G. Persenda,L. Casiez,J. Chretien,J. M. Hartmann,N. Coudurier,P. Rodriguez,A. Vandeneynde
Monolithic Electrically Pumped Group-IV Lasers on Silicon: Unlocking High-Temperature Operation through Current Injection
Monday, 26 October 202610:20 am - 10:40 amRoom 212(Level 2, BMO Centre)
G. Strobbia,J. Mayolet,A. Raison,J. Kanyandekwe,N. Gauthier,B. Mohamad,C. Guerin,T. Mota Frutuoso,V. Jousseaume
A Study on Annealing-Induced Passivation of Trap States In a Low-k Spacer
Monday, 26 October 202611:00 am - 11:20 amRoom 203(Level 2, BMO Centre)
Comparative Study of Plasma Vapour Deposition and Electrochemical Deposition of Cu-(Mn, Cr, Al) Alloys as Self-Forming Barrier Materials for Advanced Interconnects
Monday, 26 October 202601:40 pm - 02:10 pmRoom 235(Level 2, BMO Centre)
C. Lobre,T. Le Goff,T. Journot,N. Baier (Univ. Grenoble Alpes, CEA, Leti),L. Rubaldo (Lynred),S. Bel,A. Colas--Reuillon,E. Serres,F. Rochette,F. Marmonier,C. Grezes,C. Cassillo,O. Gravrand
Redesigned MCT-Based p-on-n Process for Enhanced Stability in Infrared Focal-Plane Arrays
Tuesday, 27 October 202609:30 am - 09:50 amPercheron Ballroom B(Level 3, BMO Centre)
V. Larrey,N. Badey,C. Morales,P. Noël,F. Fournel
A New Model for the Relation between Particle Size and Bonding Void Defect
Tuesday, 27 October 202611:10 am - 11:30 amRoom 212(Level 2, BMO Centre)
A. Raison,G. Strobbia,C. Guerin,M. Dartois,T. Mota Frutuoso,B. Mohamad,N. Gauthier,V. Thoréton,H. Duchemin,V. Jousseaume
Impact of Remote Hydrogen Plasmas in the Cyclic Radical-Assisted CVD of Silicon Oxycarbide Thin Films
Tuesday, 27 October 202603:00 pm - 03:20 pmPercheron Ballroom B(Level 3, BMO Centre)
B. Barbier,V. Larrey,Y. Bogumilowicz,F. Fournel
Strengthening of the Bonded Interface at Very Low Temperatures (below 100°C)
Wednesday, 28 October 202608:30 am - 08:50 amRoom 236(Level 2, BMO Centre)
P. Tchoulfian,D. Barge,J. M. Hartmann,S. Kerdilès,V. Larrey,F. Fournel,V. Loup,P. Hauchecorne,A. M. Papon,A. Thouvard,J. Richy,Y. Mazel,N. Gauthier,A. Fraczkiewicz,G. Pares
Fabrication of a Si/SiGe Channel Stack Using Wafer-to-Wafer Bonding and BESOI Technique for CFET Applications
Wednesday, 28 October 202609:30 am - 09:50 amPercheron Ballroom B(Level 3, BMO Centre)
F. Fournel,P. Perreau,G. Enyedi,A. Berthelot
Eutectic Bonding for MEMS: Reliability and Squeeze out Control
Wednesday, 28 October 202610:30 am - 11:10 amPercheron Ballroom B(Level 3, BMO Centre)
P. Montméat,M. Vacon,F. Fournel,T. Enot,A. Thiolon,L. Sanchez
Capillary Self-Assembly: Benefit for Direct Die-to-Wafer Bonding
Wednesday, 28 October 202602:40 pm - 03:00 pmPercheron Ballroom B(Level 3, BMO Centre)
H. Hijazi,C. Morales,F. Gay,F. Fournel,A. Cornelis,R. Bouis,J. Moeyaert,P. Perreau
Impact of Cu Passivation on Cu-Cu Bonding Interface Reconstruction for Low-Temperature Hybrid Bonding
Wednesday, 28 October 202604:00 pm - 04:20 pmPercheron Ballroom B(Level 3, BMO Centre)
Finite Element Modeling of Direct Wafer Bonding: A Calibrated 2D–3D Framework for Bonding Wave Propagation
Wednesday, 28 October 202605:20 pm - 05:40 pmRoom 236(Level 2, BMO Centre)
M. Bardet,J. Lespiaux,N. Gauthier,E. Dos Reis,C. Lecouvey,V. Lapras,F. Bringuier,J. M. Hartmann
On the Use of N2 As a Carrier Gas for Low Temperature Sige:B Selective Epitaxial Growth during the Production of Advanced p-Type Fd-SOI Devices
Wednesday, 28 October 202605:40 pm - 06:00 pmRoom 236(Level 2, BMO Centre)
J. Lespiaux,M. Bardet,J. M. Hartmann
A One-to-One Comparison of N2 Versus H2 as a Carrier Gas for SiGe:B Selective Epitaxial Growth
Wednesday, 28 October 202606:00 pm - 08:00 pmChampions Ballroom A & B(BMO Centre)
J. M. Hartmann,F. Roze,A. Romano,C. Pichard
Impact of Temperature on the Epitaxial Growth of Si and SiGe with Disilane
Thursday, 29 October 202608:00 am - 08:20 amRoom 236(Level 2, BMO Centre)
F. Gonzatti,L. Saidi,A. Romano,S. Vialle,J. M. Hartmann
Impact of Temperature, Pressure and Precursor Chemistry on Growth Kinetics and Boron Incorporation during Si:B Epitaxy
Thursday, 29 October 202608:20 am - 08:50 amRoom 236(Level 2, BMO Centre)
J. Kanyandekwe,B. Mohamad,V. Lapras,F. Bringuier,Z. Chalupa,T. Mota Frutuoso,K. Romanjek,J. Lacord,T. Marion,L. Saidi,L. Laraignou,P. Hauchecorne,J. Lespiaux,N. Gauthier,T. Cabaret,M. Dartois,A. Raison,M. Jourdan,V. Loup,A. Bond,J. Richy,A. Thouvard,L. Couture,A. Blot-Saby,O. Glorieux,A. Lassenberger,N. Bernier,G. Persson,D. Cooper,M. Dryhailo,A. Grenier,T. Dewolf,T. Muller,A. Andre,J. Marchand,T. Monniez,S. Jarjayes,A. S. Royet,R. Chouk,O. Cueto,M. C. Cyrille,C. Fenouillet-Beranger,J. M. Hartmann
Selective Epitaxial Growth of Very Highly Doped Sip Raised Sources and Drains Yielding Low Ron and Significant idsat Gains in 10 Nm Fd-SOI nMOS Transistors
Thursday, 29 October 202611:10 am - 11:30 amPercheron Ballroom C(Level 3, BMO Centre)
G. AL Hoyek,V. Lumineau,V. Loup
Wet Chemical Passivation of InP(100) Surfaces Using O₃
Thursday, 29 October 202611:10 am - 11:30 amPercheron Ballroom B(Level 3, BMO Centre)
Hydrophilic Bonded InP-InP Interface Study at Low Annealing Temperature
Join us in Calgary, Canada, October 25–29, 2026, for the 250th ECS Meeting a historic celebration of science, innovation, and community. This milestone event brings together researchers, engineers, and leaders from around the world to exchange ideas, foster collaboration, and shape the future of electrochemical and solid-state science. Through world-class presentations, panels, poster sessions, and exhibits, the meeting celebrates ECS’s legacy while inspiring the next generation of clean-energy, sustainable-technology, and materials breakthroughs.
More information on 250th ECS Meeting’s website
From 10/25 to 10/29/2026 |Calgary, Canada
ContactsJean-Michel HARTMANNwith any questions.
Event | Agenda|Grenoble, France
CEA-Leti is proud to co-organize the first edition of Open Innovation Materials & Manufacturing Europe (OIM² Europe), a new European forum designed to bridge the gap between cutting-edge research and industrial innovation in advanced materials, nanotechnologies, and sustainable manufacturing.
Co-organized by CEA-Leti and Soitec, the event invites you to step inside their lab-to-fab pipeline and discover the next advances in semiconductors, embedded AI, sequential 3D, FeRAM memory.
Event|Grenoble Scientific Polygon, France
Europe has the expertise and skills to promote a more responsible digital sector (frugality, regulation, ethics) that creates high-quality jobs. However, mastery of data is just as crucial as mastery of materials and energy when it comes to the operability and sustainability of disruptive digital components and integrated circuits. More sustainable integrated hardware and software solutions will be discussed at the END* symposium in the field of Information & Communication Technologies (ICT)
Event | Agenda|SEMICON Europa, Messe München, Germany.
Artificial intelligence is reshaping the semiconductor landscape, demanding breakthroughs across the entire technology stack.
This session explores the deep-tech innovations enabling the AI era—from advanced compute, 3D integration and silicon photonics to power-efficient packaging—before showcasing two real-world demonstrations and concluding with Europe’s vision for sustainable AI infrastructure.
During this 19th edition of Leti Innovation Days Tokyo, CEA-Leti’s CEO will celebrate R&D partnerships with its partners in Japan and explore new possibilities to support the Japanese semiconductor industry. This year’s theme is “The AI-Chip Revolution: Scaling Innovation in Semiconductors”.
High-level speakers and technical experts will present the latest advances through keynote speeches, seminars and live demos. Join us to enjoy lively networking and exchanges in a unique setting at the Residence of France in Japan.
Physical AI begins with sensing. As AI moves into the physical world, application-specific sensors are becoming essential for enabling efficient, reliable, and scalable systems. This year the MEMS & Imaging Summit explores how sensor innovation, semiconductor technologies, and advanced manufacturing are shaping the next generation of Physical AI. From custom sensor design to system integration, industry experts will discuss how purpose-built sensing solutions are driving practical applications across medical, manufacturing and consumer applications.