CEA-Leti will present 11 papers at EUROSOI-ULIS 2026, taking place in Granada, Spain, from May 20 to 22, underscoring its position as a premier research center for advanced silicon integration. The contributions span device fabrication, modeling, and simulation, with a strong focus on fully depleted silicon-on-insulator (FD-SOI) technology and its emerging applications.

Key topics include cryogenic RF characterization of passive components for VCO and PLL design in P28 FD-SOI, aimed at quantum computing; a mechanical strain booster called “BOX CREEP” for next-generation FD-SOI; and strain engineering of thin monocrystalline Si films on 8-inch wafers via surface activated hot bonding. Process-level studies address the impact of source/drain dopant implantation and spike annealing on 25 nm FD-SOI n-MOSFETs, mandrel material selection for self-aligned double patterning at the 10 nm node, and novel structures such as reduced metal gate height combined with in-situ doped faceted raised source/drain regions for advanced RF devices. Simulation work includes TCAD studies of stacked MoS₂ channel FETs with a channel-last integration, and room-temperature electrical characterization of FD-SOI spin qubit devices using TCAD. Additional papers cover punch-through failure mitigation in advanced nodes, a split MLP architecture for joint modeling of drain and gate currents, and a scalable time-multiplexed biasing architecture for FD-SOI spin qubits.

The conference aims to bring together academia, research institutions, and industry to foster collaboration on SOI technology and advanced microelectronic devices. For further details, contact Joris Lacord.

Beyond EUROSOI-ULIS, CEA-Leti is also hosting an “Organoids & Organoids-on-Chip” workshop in Grenoble on September 29, 2026, and will exhibit at the LID World Summit from June 23 to 25 at Maison Minatec, Grenoble. At booth 502, experts will discuss seven papers and posters on hybrid bonding and low-temperature processing, and introduce high-performance microLED solutions for next-generation displays and data communications.

From 5/20/2026 to 5/22/2026Granada, SPAIN

With 11 papers, Leti has established itself as a leading research centre in the field of advanced silicon integration.​

DISCOVER CEA-LETI’S MAJOR SCIENTIFIC RESULTS

With 11 papers, the institute will present this year’s major scientific results at EuroSOI Ulis, including the following topics:

Cryogenic RF Characterisation of Passive Components for VCO and PLL Design in P28 FD-SOI for Quantum Computing Applications​

BOX CREEP: A Mechanical Booster for Next-Generation FDSOI

Strain engineering of thin monocrystalline Si films on 8-inch wafers using Surface Activated Hot Bonding​

Impact of source/drain dopant implantation and spikeannealing on electrical parameters of 25 nm FDSOI n-MOSFETs

Mandrel material selection as prerequisite for SADP implementation at the 10 nm FD-SOI node

In-depth TCAD study of stacked MoS₂ channel FETs based on a channel-last integration

Understanding room-temperature electrical characterizations of FDSOI spin qubit devices via TCAD simulations

Reduced metal gate height and in-situ doped faceted raised source and drain regions for advanced RF FD-SOI devices​

Punch-Through Failure Mitigation in Advanced FD-SOI Nodes​​

Split MLP Architectures for Accurate Joint Modeling of drain and gate currents in FD-SOI Transistors​

​A S​calable Time-Multiplexed Biasing Architecture for FDSOI Spin Qubits

This conference aims to bring together scientists and engineers in an interactive forum to discuss SOI technology and advanced microelectronic devices. A key objective is to foster collaboration and partnerships among academia, research institutions, and industry stakeholders in the field.​

More information on​​EURO​​SOI-ULIS ​2026website​

From5/20/2026to5/22/2026|​Granada, SPAIN​​

Contact:​Joris LACORD​​​with any questions.​​

Event | Agenda|Y-Spot Partners, Grenoble, France

We are delighted to announce that CEA is hosting the "Organoids & Organoids-on-Chip" workshop at its Grenoble site on September 29, 2026.

Event|Maison Minatec, Grenoble, France

LID World Summit from 23 to 25 June offer you a front-row seat to our most recent advances. Join more than 1,250 semiconductor industry professionals at this three-day global event and come away equipped and inspired to innovate!​

CEA-Leti experts will be onsite at booth 502 and available to discuss the findings of Seven Papers and Posters Includes Hybrid Bonding and Low-Temperature Processing

Avec 11 papiers, le Leti se positionne comme un centre de recherche incontournable dans le domaine de l'intégration ultime sur silicium.

CEA-Leti will introduce their high-performance microLED solutions for next-generation displays and data communications.