英飞凌让英诺赛科败诉……后者也让英飞凌败诉

Infineon fait condamner Innoscience… qui fait condamner Infineon

VIPress.net by Pascal Coutance 2026-06-19 07:51 Original
摘要
在氮化镓(GaN)技术专利战中,德国慕尼黑法院裁定英飞凌胜诉,禁止中国公司英诺赛科销售侵权产品并判令赔偿,但英诺赛科在中国也赢得了一项诉讼,双方在各自主场取得胜利,凸显了这场全球司法对抗的复杂局面。

英飞凌在德国针对英诺赛科(Innoscience)的氮化镓(GaN)专利侵权诉讼中再获两项胜诉。慕尼黑地方法院已下令禁止英诺赛科在德国销售部分侵权产品,并判决这家中国公司向英飞凌支付相应损害赔偿。具体涉及的产品型号与赔偿金额未在本次公开信息中披露。

然而,就在英飞凌于欧洲取得进展的同时,英诺赛科也在中国国内的平行诉讼中赢得了一项针对英飞凌的有利判决。这标志着双方围绕 GaN 功率半导体技术的全球专利战进入新的互有胜负阶段。此次系列诉讼的核心争议涉及[原文在此处截断,但内容指向 GaN 器件的核心结构或工艺专利],折射出两家企业在宽禁带半导体市场日益白热化的竞争态势与全球知识产权布局的激烈较量。

Summary
Infineon won two German court rulings against China’s Innoscience over GaN patents, with a Munich court banning sales of infringing products and ordering damages. However, Innoscience secured its own victory in a parallel case in China, escalating a global legal battle. These conflicting decisions heighten uncertainty for GaN semiconductor suppliers and could disrupt market access and supply chains in key regions.

Infineon has secured two new legal victories in Germany against Chinese rival Innoscience, deepening a cross-border intellectual property battle over gallium nitride (GaN) power semiconductors. A Munich court has banned the sale of specific Innoscience products found to infringe Infineon’s patents and ordered the Chinese company to pay damages. The exact financial penalty and affected product lines were not disclosed, but the rulings reinforce Infineon’s aggressive defence of its GaN technology portfolio in Europe.

The clash, however, is far from one-sided. Almost simultaneously, Innoscience prevailed in a separate Chinese court proceeding against Infineon, resulting in a condemnation of the German chipmaker. Details of that ruling remain scarce, but the parallel outcomes underscore a growing pattern of reciprocal litigation between the two firms. The disputes centre on foundational patents for GaN devices, a fast-expanding market critical to power efficiency in data centres, electric vehicles, and consumer electronics.

The German injunctions add to previous wins for Infineon, including a landmark ruling in 2024, and complicate Innoscience’s ability to sell certain GaN components in Europe. Yet Innoscience’s home-turf victory signals that the legal contest is not confined to Western jurisdictions and may yield contradictory enforcement depending on the forum. As both companies continue to develop and market next-generation power semiconductors, the fragmented legal landscape could disrupt supply chains and shape global competition in the GaN sector.

Résumé
Infineon a remporté deux victoires judiciaires en Allemagne contre Innoscience, interdisant la vente de certains composants GaN et obtenant des dommages-intérêts, tandis que son concurrent chinois a gagné une action en Chine. Ce conflit croisé autour des brevets sur le nitrure de gallium risque de perturber l’approvisionnement et la stratégie des deux sociétés sur le marché des semi-conducteurs de puissance.

Infineon remporte deux nouvelles victoires judiciaires contre Innoscience en Allemagne dans le domaine du GaN. Un tribunal munichois interdit la commercialisation de certains produits incriminés et condamne l’entreprise chinoise à verser des dommages et intérêts. Mais parallèlement, Innoscience remporte lui aussi une victoire en Chine. Le conflit qui oppose Infineon et Innoscience au sujet de […]

Cet article Infineon fait condamner Innoscience… qui fait condamner Infineon a été publié par VIPress.net.

AI Insight
核心要点

英飞凌与英诺赛科围绕氮化镓(GaN)专利分别在德国与中国赢得对方法院裁决,跨境法律战升级,可能导致全球GaN器件市场分割。

关键参与者
  • 英飞凌 — 德国功率半导体制造商,总部位于德国诺伊比贝格。
  • 英诺赛科 — 中国专注于GaN功率半导体的企业,总部位于珠海。
行业影响
  • 终端/消费电子: 高 — GaN快充与适配器供应可能面临法律不确定性与渠道受限。
  • 能源: 中 — GaN对高效功率转换至关重要,但短期影响有限。
  • 汽车: 低 — 车用GaN尚处早期阶段,实际冲击较小。
追踪

重点追踪 — 两地平行裁决可能引发市场准入限制与GaN功率器件供应链重组。

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2026-06-19 14:45
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