Infineon has secured two new legal victories in Germany against Chinese rival Innoscience, deepening a cross-border intellectual property battle over gallium nitride (GaN) power semiconductors. A Munich court has banned the sale of specific Innoscience products found to infringe Infineon’s patents and ordered the Chinese company to pay damages. The exact financial penalty and affected product lines were not disclosed, but the rulings reinforce Infineon’s aggressive defence of its GaN technology portfolio in Europe.
The clash, however, is far from one-sided. Almost simultaneously, Innoscience prevailed in a separate Chinese court proceeding against Infineon, resulting in a condemnation of the German chipmaker. Details of that ruling remain scarce, but the parallel outcomes underscore a growing pattern of reciprocal litigation between the two firms. The disputes centre on foundational patents for GaN devices, a fast-expanding market critical to power efficiency in data centres, electric vehicles, and consumer electronics.
The German injunctions add to previous wins for Infineon, including a landmark ruling in 2024, and complicate Innoscience’s ability to sell certain GaN components in Europe. Yet Innoscience’s home-turf victory signals that the legal contest is not confined to Western jurisdictions and may yield contradictory enforcement depending on the forum. As both companies continue to develop and market next-generation power semiconductors, the fragmented legal landscape could disrupt supply chains and shape global competition in the GaN sector.