Samsung Electronics and Broadcom have signed a memorandum of understanding to deepen their collaboration in memory and foundry technologies, with the goal of powering Broadcom’s next generation of AI infrastructure through 2030. The agreement is valued at more than $200 billion.

The partnership focuses on two key areas: HBM memory and Samsung’s 2-nanometer foundry process. These technologies are expected to be used in future AI accelerators developed by Broadcom, as demand rises for more advanced chips capable of handling large-scale AI workloads.

By combining Samsung’s memory and manufacturing capabilities with Broadcom’s chip design and infrastructure ambitions, the two companies are positioning themselves for a long-term role in the AI hardware supply chain. The deal underscores how major semiconductor players are aligning around the rapid expansion of AI data centers and accelerator systems over the rest of the decade.

L’accord couvre la mémoire HBM et les technologies de fonderie en 2 nanomètres pour équiper les futurs accélérateurs d’IA de Broadcom, d’ici 2030. Samsung Electronics et Broadcom ont annoncé la signature d’un protocole d’accord visant à étendre leur collaboration dans les technologies de mémoires et de fonderie, afin de soutenir la prochaine génération d’infrastructures d’IA. […]

Cet article Samsung et Broadcom nouent un partenariat à plus de 200 Md$ a été publié par VIPress.net.