EUROSOI-ULIS 2026

EUROSOI-ULIS 2026

CEA-Leti Original
摘要
法国CEA-Leti实验室将在2026年IITC会议上公布两项关键研究:一是通过铌-铌直接键合实现精细间距超导互连,二是由Emmanuel Petitprez等作者提出的低成本中段制程集成方案,旨在缓解10纳米FD-SOI标准单元的M1拥塞。这些成果有望降低先进互连的制造成本并提升芯片密度,对超导集成电路和高性能FD-SOI芯片的商业化进程产生推动影响。

2026年6月1日至4日,国际互连技术会议(IITC)将在美国加州圣何塞举办,聚焦面向ULSI集成电路应用的先进互连、金属化及3D异构集成技术。CEA-Leti将在会上展示两项重要科研成果。6月2日(周二)上午10:10至10:35,论文2.2“面向细间距超导互连的Nb-Nb直接键合技术”将在Hayes Mansion发表。6月3日(周三)下午4:10至4:30,论文10.3“利用低成本MOL集成缓解10nm FD-SOI标准单元中的M1拥堵”同样在Hayes Mansion进行。该论文第一作者为Emmanuel Petitprez,作者团队还包括Pierre Brianceau、Alexis Krakovinsky、Krunoslav Romanjek、Yves Maneglia、Olivier Billoint、Jorge Nacenta-Mendivil、Fabien Bringuier、Messaoud Bedjaoui、Valérie Lapras、François Aussenac、Ludovic Couture、Alexandre Magalhaes-Lucas、Gennie Garnier、Blandine Duriez、Marie-Claire Cyrille及Claire Fenouillet-Beranger。会议相关咨询可联系Philippe Rodriguez。

此外,CEA宣布将于2026年9月29日在格勒诺布尔厂区举办“类器官与器官芯片”研讨会。而在6月23日至25日于格勒诺布尔Maison Minatec举行的LID世界峰会上,CEA-Leti将在502号展位展示包括混合键合与低温工艺在内的7篇论文与海报,并首次亮相面向下一代显示与数据通信的高性能microLED解决方案。凭借提交11篇论文的突出表现,Leti已确立其在先进硅集成领域的领先研究中心地位。

Summary
CEA-Leti will present two notable papers at the IITC 2026 conference: one on low-cost MOL integration to ease M1 congestion in 10nm FD-SOI standard cells (first-authored by Emmanuel Petitprez with a large team), and another on fine-pitch superconducting interconnects via Nb-Nb direct bonding. The contributions, part of a broader showcase including microLED advances, reinforce CEA-Leti’s leadership in advanced interconnect and 3D heterogeneous integration with potential cost and performance benefits for ULSI IC manufacturing.

CEA-Leti will showcase a broad range of advanced semiconductor research at multiple upcoming events, headlined by two papers at the International Interconnect Technology Conference (IITC) 2026, taking place June 1–4 in San Jose, California. IITC focuses on advanced interconnect, metallization, and 3D heterogeneous integration for ULSI ICs. On Tuesday, June 2, at 10:10 AM, the institute presents “Toward Fine Pitch Superconducting Interconnects with Nb-Nb Direct Bonding.” The following day, at 4:10 PM, it unveils a solution for metal-layer congestion in 10nm FD-SOI standard cells: “Relieving M1 Congestion in 10nm FD-SOI Standard Cells with a Low-Cost MOL Integration,” authored by Emmanuel Petitprez and a team of 17 researchers including Pierre Brianceau and Claire Fenouillet-Beranger. Both sessions are at the Hayes Mansion. Philippe Rodriguez is the contact for IITC inquiries.

Beyond IITC, CEA-Leti will attend the LID World Summit from June 23–25 at Maison Minatec, Grenoble. Experts will staff booth 502, presenting seven papers and posters covering hybrid bonding and low-temperature processing, contributing to a total of 11 papers that cement CEA-Leti’s leadership in advanced silicon integration. The institute also plans to debut high-performance microLED solutions for next-generation displays and data communications. Later, on September 29, CEA hosts the “Organoids & Organoids-on-Chip” workshop at its Grenoble site.

Résumé
Le CEA-Leti présente à l'IITC 2026 deux avancées clés : des interconnexions supraconductrices à pas fin par collage direct Nb-Nb, et une intégration MOL bas coût pour réduire la congestion M1 en cellules FD-SOI 10nm, portée par Emmanuel Petitprez et une large équipe. Ces résultats renforcent son leadership en intégration hétérogène 3D et ouvrent la voie à des nœuds FD-SOI plus denses et performants.

From 6/1/2026 to 6/4/2026San Jose, California, US

The IITC conference invites original research on advanced interconnect, metallization, and 3D heterogeneous integration technologies for ULSI IC applications.​

DISCOVER CEA-LETI’S MAJOR SCIENTIFIC RESULTS

2 Tuesday June 202610:10AM - 10:35AMPaper 2.2Hayes Mansion​

Toward Fine Pitch Superconducting Interconnects with Nb-Nb Direct Bonding​​

3 Wenesday June 202604:10 PM - 04:30 PMPaper 10.3​Hayes Mansion

1st Author : Emmanuel PetitprezAuthors: Pierre BrianceauAlexis KrakovinskyKrunoslav RomanjekYves ManegliaOlivier BillointJorge Nacenta-Mendivil​Fabien BringuierMessaoud BedjaouiValérie LaprasFrançois ​AussenacLudovic CoutureAlexandre Magalhaes-Lucas​Gennie GarnierBlandine ​DuriezMarie-Claire​ CyrilleClaire​Fenouillet-Beranger

Relieving M1 Congestion in 10nm FD-SOI Standard Cells with a Low-Cost MOL Integration

ABOUTInternational Interconnect Technology Conference

The IITC conference invites original research on advanced interconnect, metallization, and 3D heterogeneous integration technologies for ULSI IC applications.​​

More information on​​International Interconnect Technology Conferencewebsite​

From 6/01/2026to 4/06/​​​2026​ |​San Jose, California, US​

Contact:​Philippe Rodriguez​​​with any questions.​​

Event | Agenda|Y-Spot Partners, Grenoble, France

We are delighted to announce that CEA is hosting the "Organoids & Organoids-on-Chip" workshop at its Grenoble site on September 29, 2026.

Event|Maison Minatec, Grenoble, France

LID World Summit from 23 to 25 June offer you a front-row seat to our most recent advances. Join more than 1,250 semiconductor industry professionals at this three-day global event and come away equipped and inspired to innovate!​

CEA-Leti experts will be onsite at booth 502 and available to discuss the findings of Seven Papers and Posters Includes Hybrid Bonding and Low-Temperature Processing

With 11 papers, Leti has established itself as a leading research centre in the field of advanced silicon integration.​

CEA-Leti will introduce their high-performance microLED solutions for next-generation displays and data communications.

AI Insight
核心要点

CEA-Leti 将在 IITC 2026 公布超导互连与 10nm FD-SOI 标准单元优化等成果,巩固其在先进硅集成领域的领导地位。

关键参与者
  • CEA-Leti:法国格勒诺布尔的电子与信息技术研究所,专注于半导体互连、3D 异构集成及 microLED。
行业影响
  • ICT:高 — 超导互连和 3D 集成直接支撑芯片微缩与性能提升。
  • 计算/AI:高 — FD-SOI 拥堵缓解提升算力密度,超导互连降低高性能计算能耗。
  • 终端/消费电子:中 — microLED 方案用于下一代显示与数据通信。
追踪建议

强烈追踪 — CEA-Leti 的互连突破对欧盟半导体技术主权和下一代芯片设计具有标杆作用。

Highlights
Upcoming Event
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CEA-Leti
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Categories
半导体 科研
AI Processing
2026-05-13 15:23
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