Larbi Boukhezar(RMS团队)的论文答辩:先进BiCMOS技术中作为关键前端构建模块的D波段无源电路与功率放大器研发

Thesis defence of Larbi Boukhezar (RMS team): Development of D-band passive circuits and power amplifiers as key front-end building blocks in advanced BiCMOS technology

TIMA Lab News Original
摘要
Larbi Boukhezar(来自RMS团队)完成博士论文答辩,课题聚焦于利用先进BiCMOS工艺开发D波段无源电路与功率放大器,作为下一代高频通信系统的关键前端模块。该项研究有望推动D波段(110-170 GHz)在6G和感知应用中的集成度与性能突破,其技术影响涉及更高数据速率和小型化射频前端设计。

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Summary
Larbi Boukhezar of the RMS team defended his thesis on developing D-band passive circuits and power amplifiers in advanced BiCMOS technology, creating essential front-end building blocks. The work targets high-frequency applications, potentially advancing millimeter-wave communication systems.

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Résumé
Larbi Boukhezar (équipe RMS) a soutenu une thèse sur le développement de circuits passifs et d'amplificateurs de puissance en bande D, réalisés en technologie BiCMOS avancée. Ces blocs frontaux sont essentiels pour les futurs systèmes de communication et de détection à très haute fréquence. Ces travaux pourraient accélérer l’intégration de solutions performantes pour les applications 6G et l’imagerie radar.

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Core Point

Larbi Boukhezar’s PhD defense on D-band passive circuits and power amplifiers in advanced BiCMOS addresses front-end building blocks critical for next-gen mm-wave communication and radar systems.

Key Players

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Industry Impact
  • ICT: High — D-band front-ends directly enable 6G backhaul and high-capacity wireless links.
  • Automotive: High — D-band radar for autonomous driving requires such power amplifiers and circuits.
  • Terminals/Consumer Electronics: Medium — may enable future high-speed consumer devices, but adoption timeline is long.
Tracking

Monitor — academic research milestone with direct relevance to industrial development of D-band systems; no immediate product launch.

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半导体 科研
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2026-06-02 23:02
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