NXP与CGD在GaN技术上的合作

Partenariat technologique entre NXP et CGD sur le GaN

VIPress.net by Pascal Coutance 2026-06-10 08:31 Original
摘要
英荷半导体企业Cambridge GaN Devices与NXP宣布长期技术合作，将共同开发完整的氮化镓（GaN）系统解决方案，目标是在数据中心和汽车市场加速普及并确立其主流地位。

英国剑桥GaN器件公司（Cambridge GaN Devices，CGD）与荷兰恩智浦半导体（NXP Semiconductors）宣布启动长期技术合作，共同开发完整的氮化镓（GaN）系统解决方案，目标是推动GaN技术在数据中心和汽车市场的规模应用。

此次合作将融合CGD在GaN功率IC领域的核心技术优势与NXP在系统级设计、高压应用及生态整合方面的深厚积累。双方计划打造涵盖芯片、驱动、控制及保护电路的完整GaN参考平台，从千瓦级数据中心电源到车载充电与DC/DC转换器，全面提升功率密度与能效，同时降低系统成本。

在数据中心领域，GaN凭借高频开关和低损耗特性，有望替代传统硅器件，显著降低电源单元的散热需求与体积，契合AI算力爆发对供电密度的严苛要求；在汽车领域，高压GaN器件可帮助整车厂简化车载充电拓扑结构，缩短充电时间并延长续航。

此举标志着GaN产业链从离散器件竞争转向系统级生态协同。CGD首席执行官表示，与NXP的绑定将使GaN技术真正跨越从样品到量产的鸿沟，而NXP则看中CGD在温控、可靠性及短路耐受方面已通过车规验证的差异化技术。分析认为，这一合作将加速GaN在高端电源与汽车核心供电中的渗透，并对碳化硅（SiC）在部分场景的独占地位形成直接挑战。

Summary
Cambridge GaN Devices (CGD) and NXP Semiconductors have formed a long-term partnership to co-develop complete gallium nitride (GaN) system solutions, targeting data centers and automotive markets. The British and Dutch firms aim to accelerate GaN adoption to improve efficiency and performance in these sectors.

Cambridge GaN Devices (CGD), a UK-based specialist in gallium nitride power semiconductors, and Dutch semiconductor giant NXP have launched a long-term technology partnership. The collaboration aims to create complete GaN system solutions, targeting two high-growth sectors: data centers and automotive. By combining CGD’s GaN expertise with NXP’s system-level capabilities, the partners seek to accelerate adoption of gallium nitride technology, which offers superior efficiency, higher switching speeds, and smaller form factors compared to traditional silicon. The ambition is to establish GaN as a mainstream power technology in applications demanding high performance and energy density. No financial terms or specific product roadmaps were disclosed.

Résumé
Cambridge GaN Devices et NXP Semiconductors ont annoncé un partenariat à long terme pour développer des solutions système complètes à base de nitrure de gallium. Leur objectif est d’imposer cette technologie dans les centres de données et l’automobile, en accélérant son adoption sur ces marchés stratégiques.

L’entreprise britannique et le groupe Néerlandais vont développer des solutions système GaN complètes avec l’ambition d’imposer le nitrure de gallium dans les centres de données et l’automobile. Cambridge GaN Devices (CGD) et NXP Semiconductors viennent d’entamer une collaboration à long terme visant à accélérer l’adoption du nitrure de gallium (GaN) sur les marchés des centres […]

Cet article Partenariat technologique entre NXP et CGD sur le GaN a été publié par VIPress.net.

AI Insight
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Core Point

Cambridge GaN Devices (CGD) and NXP Semiconductors have formed a long-term partnership to develop complete GaN system solutions, aiming to accelerate gallium nitride adoption in data centers and automotive power systems, promising major efficiency gains.

Key Players
  • Cambridge GaN Devices (CGD) — fabless GaN power transistor specialist, UK.
  • NXP Semiconductors — broad-line semiconductor manufacturer, Netherlands.
Industry Impact
  • Computing/AI: High — GaN enables more efficient, compact power supplies for data centers, cutting energy consumption and thermal load.
  • Automotive: High — GaN improves power conversion in EV onboard chargers, DC-DC converters, and traction inverters, boosting range and reducing weight.
Tracking

Strongly track — partnership combines CGD’s GaN transistor IP with NXP’s system integration and automotive-grade reliability, potentially setting a new standard for high-efficiency power solutions.

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AI Processing
2026-06-10 19:34
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