英飞凌（Infineon）在针对中国氮化镓（GaN）芯片制造商英诺赛科（Innoscience）的专利侵权诉讼中再获关键胜利。慕尼黑第一地区法院（Landgericht München I）裁定英诺赛科侵犯了英飞凌的GaN专利，并下令禁止相关侵权产品在德国销售。这是继此前在美国类似诉讼中败诉后，英诺赛科在大西洋两岸遭遇的又一起司法挫折。法院的禁令将直接影响英诺赛科在德国市场的业务，凸显出英飞凌在GaN功率半导体领域持续强化其知识产权保护的战略。
GaN：英飞凌接连赢得针对英诺赛科的诉讼
GaN : Infineon enchaîne les victoires judiciaires contre Innoscience
摘要
慕尼黑法院裁定中国厂商英诺赛科侵犯英飞凌的氮化镓（GaN）专利，并禁止其在德国销售侵权产品。这是英飞凌在大西洋两岸对英诺赛科取得的一系列司法胜利中的最新一起，进一步巩固了其GaN技术布局。该判决对英诺赛科的欧洲市场拓展构成重大打击。
慕尼黑法院裁定中国厂商英诺赛科侵犯英飞凌的氮化镓（GaN）专利，并禁止其在德国销售侵权产品。这是英飞凌在大西洋两岸对英诺赛科取得的一系列司法胜利中的最新一起，进一步巩固了其GaN技术布局。该判决对英诺赛科的欧洲市场拓展构成重大打击。
Summary
A Munich court has ruled against Chinese chipmaker Innoscience for infringing Infineon’s GaN patents, banning the sale of the affected products in Germany. This verdict marks another legal defeat for Innoscience in a series of patent battles across Europe and the United States.
A Munich court has ruled against Chinese chipmaker Innoscience for infringing Infineon’s GaN patents, banning the sale of the affected products in Germany. This verdict marks another legal defeat for Innoscience in a series of patent battles across Europe and the United States.
A Munich district court has ruled that China-based Innoscience infringed Infineon’s gallium nitride (GaN) power semiconductor patents, ordering a ban on the sale of the affected products in Germany. The decision marks the latest in a string of courtroom defeats for Innoscience on both sides of the Atlantic, as Infineon intensifies its global IP enforcement campaign.
The latest judgment from Landgericht München I follows a preliminary injunction that the same court granted Infineon in March 2024, which already halted the distribution of specific Innoscience GaN transistors in Germany. Infineon’s lawsuits target patents central to GaN-on-silicon technology, a key enabler for efficient, compact power converters in everything from data-centre power supplies to electric vehicles. The German rulings apply to products featuring the infringing technology, effectively blocking a significant European market entry for the fast-growing Chinese challenger.
In the United States, Infineon registered another win earlier this year when the U.S. International Trade Commission (ITC) issued a limited exclusion order against Innoscience, barring imports of its infringing GaN parts. Innoscience had contested the claims, but the ITC judge found violations of Infineon’s IP, mirroring the outcome in Germany.
Infineon hailed the decisions as a validation of its innovation in wide-bandgap semiconductors, where it competes with entrenched players like Navitas and Texas Instruments. For Innoscience, which has rapidly scaled manufacturing and boasts a portfolio of over 1,000 GaN-related patents of its own, the mounting legal pressure threatens its ambitions to expand beyond China into the lucrative European and North American markets. The Munich injunction, unless overturned on appeal, strangles a vital sales channel and may embolden Infineon to pursue similar actions in other European jurisdictions, given the bloc’s unified patent court framework. The disputes underscore the high-stakes battle over GaN technology as power electronics transition from legacy silicon to more efficient materials.
Résumé
Le tribunal de Munich a condamné le fabricant chinois Innoscience pour contrefaçon de brevets GaN détenus par Infineon, lui interdisant toute vente des produits incriminés en Allemagne. Cette décision s’inscrit dans une série de défaites judiciaires pour Innoscience des deux côtés de l’Atlantique, renforçant la position dominante d’Infineon sur le marché des semi-conducteurs en nitrure de gallium.
Le tribunal de Munich a condamné le fabricant chinois Innoscience pour contrefaçon de brevets GaN détenus par Infineon, lui interdisant toute vente des produits incriminés en Allemagne. Cette décision s’inscrit dans une série de défaites judiciaires pour Innoscience des deux côtés de l’Atlantique, renforçant la position dominante d’Infineon sur le marché des semi-conducteurs en nitrure de gallium.
Le tribunal de Munich vient de condamner Innoscience pour contrefaçon de brevets GaN d’Infineon, lui interdisant toute vente des produits incriminés en Allemagne. Un nouveau revers pour le fabricant chinois dans une série de défaites judiciaires des deux côtés de l’Atlantique. Le tribunal de district de Munich (Landgericht München I) a rendu un nouveau jugement […]
Cet article GaN : Infineon enchaîne les victoires judiciaires contre Innoscience a été publié par VIPress.net.
Core Point
Infineon won a Munich court ruling against Innoscience for GaN patent infringement, banning sales in Germany and reinforcing its IP dominance in a critical semiconductor technology.
Key Players
- Infineon — German semiconductor firm specializing in power electronics and GaN devices, based in Neubiberg.
- Innoscience — Chinese GaN power chip manufacturer, facing multiple patent infringement losses across jurisdictions.
Industry Impact
- Energy: High — GaN is vital for efficient power conversion; the ban disrupts supply chains and market access.
- Terminals/Consumer Electronics: Medium — GaN enables compact fast chargers; product availability in Germany may be affected.
- Automotive: Medium — GaN used in EV onboard chargers; IP uncertainty could delay adoption.
- Computing/AI: Medium — Data center power systems rely on GaN efficiency; legal risks might slow deployment.
Tracking
Strongly track — This litigation shapes the global GaN power semiconductor market, potentially shifting supply chains and competitive dynamics.
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2026-07-06 17:04
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