Power Integrations 推出首款 2200 V GaN 技术！

摘要
Power Integrations 宣布推出首款 2200V GaN 技术，将 GaN 的适用电压范围扩展到此前主要由 SiC 覆盖的区间，并提供更具竞争力的高频方案。该技术面向 AI 数据中心、纯电动汽车以及 HVDC 高压直流基础设施等场景，可能提升相关电源系统的效率与性能。

Power Integrations 近日推出首个 2200 V GaN（氮化镓）技术，标志着 GaN 的应用范围首次延伸到过去主要由 SiC（碳化硅） 覆盖的高压区间。公司强调，这一进展为高频电源设计提供了一个更具吸引力的替代方案，尤其面向 AI 数据中心、电动汽车以及 HVDC（高压直流输电）基础设施 等场景。

这项突破的意义在于，GaN 过去更多用于中低压、高频、高效率电源系统，而 2200 V 级别的器件则意味着它开始进入更高电压、更高功率的应用领域。相比传统方案，GaN 的高频特性有望帮助系统实现更高的功率密度、更小的体积和更优的效率，从而在部分原本依赖 SiC 的场景中形成竞争。

Power Integrations 表示，这一技术进展是其在 GaN 研发上的重要里程碑，也反映出 GaN 正在向更广泛的工业和能源基础设施市场扩展。对于 AI 数据中心而言，高效率电源转换有助于降低能耗和散热压力；在电动车领域，更高电压等级的器件则可能支持更紧凑、更高效的车载电源架构；而在 HVDC 场景中，高频化和高效率同样是提升输电系统性能的关键。

总体来看，Power Integrations 的 2200 V GaN 技术不仅扩大了 GaN 的可用电压范围，也进一步加剧了 GaN 与 SiC 在高压功率电子市场中的竞争。

Summary
Power Integrations has launched its first 2200V GaN technology, extending GaN’s operating voltage range into territory traditionally served by SiC. The company positions it as a compelling high-frequency alternative for applications including AI data centers, electric vehicles, and HVDC infrastructure, potentially improving performance and design flexibility for next-generation power systems.

Power Integrations has unveiled what it describes as the first 2200 V gallium nitride (GaN) technology, a development that pushes GaN into voltage ranges traditionally dominated by silicon carbide (SiC). The company says the breakthrough could provide a compelling high-frequency alternative for demanding power applications, including AI data centers, electric vehicles, and HVDC infrastructure.

The significance of the announcement lies in the fact that GaN has so far been used mainly in lower-voltage segments, while SiC has held the advantage at higher voltages. By reaching 2200 V, Power Integrations is positioning GaN as a viable option in markets where efficiency, switching speed, and power density are critical, and where designers have typically had to rely on SiC-based solutions.

The move marks an important step in the evolution of wide-bandgap semiconductors, potentially broadening the competitive landscape for next-generation power electronics. If adopted commercially, the technology could open the door to smaller, faster, and more efficient power systems in high-growth sectors such as AI infrastructure, electrified transport, and long-distance high-voltage power transmission.

Résumé
Power Integrations annonce le lancement de sa première technologie GaN 2200 V, visant à étendre le champ d’application du GaN aux plages de tension auparavant couvertes par le SiC. Cette avancée ouvre une alternative haute fréquence pour des usages clés comme les centres de données d’IA, les véhicules électriques et les infrastructures HVDC, avec un impact potentiel sur l’efficacité et la conception des systèmes de puissance.

Cette avancée importante étend le champ d’application du GaN aux plages de tension traditionnellement couvertes par le SiC, offrant ainsi une alternative haute fréquence convaincante pour des applications telles que les centres de données d’IA, les véhicules électriques et les infrastructures HVDC. Power Integrations vient de franchir une étape importante dans le développement de la […]

Cet article Power Integrations lance la première technologie GaN 2200 V ! a été publié par VIPress.net.

Power Integrations 推出首款 2200 V GaN 技术！

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