2026 VLSI研讨会

2026 VLSI SYMPOSIUM

CEA-Leti Original
摘要
法国CEA-Leti将在2026年IEEE VLSI研讨会上展示三项成果:一篇关于工程化3D HZO铁电电容器以将嵌入式FeRAM缩至22nm的论文,以及神经技术和用于硅量子比特控制的低温CMOS电路两个报告。这些进展由CEA-Leti团队推动,有望在先进存储、神经形态计算和量子计算领域产生重大技术影响。

CEA-Leti将在2026年VLSI研讨会上展示三项重要研究成果,覆盖铁电存储器、神经技术及低温CMOS电路。该研讨会将于2026年6月14日至18日在夏威夷檀香山希尔顿夏威夷村酒店举行,主题为“以VLSI创新推动AI前沿”,采用全程线下活动结合次日开始的点播回放形式。

在技术分会T9.4(6月17日周三16:40-17:05,Honolulu 1厅),Carine Jahan、Laurent Grenouillet等34位研究人员将发表《T9.4 | Engineering 3D HZO ferroelectric capacitors to scale down 22nm embedded FeRAM》,聚焦三维铪锆氧(HZO)铁电电容器工程,以实现22纳米嵌入式铁电存储器的微缩化。另一场题为《Innovative Neurotechnologies – A Journey from the Lab to the Clinic and Back》的午间演讲(6月18日周四12:15-13:15,Coral 4/5厅)将探讨神经技术从实验室到临床的转化路径。此外,6月14日周日下午2:25-2:50的研讨会(Tapa 1厅)上,CEA-Leti专家将带来《W1-4 | Cryo-CMOS Circuits for the Control and Readout of Silicon Qubits》,展示用于硅量子比特控制与读出电路的低温CMOS设计。

本届VLSI技术研讨会由IEEE/JSAP主办,已连续举办45年,强调技术与电路的深度融合,同期将涵盖人工智能、物联网、可穿戴/植入式生物医学、大数据、自动驾驶等多个热点领域。所有技术环节均可在会后通过点播获取。更多详情可访问2026 VLSI研讨会官网,或联系Gaël Pillonnet。

Summary
CEA-Leti will present a paper at the 2026 VLSI Symposium detailing a 3D HZO ferroelectric capacitor design to enable 22nm embedded FeRAM, alongside sessions on neurotechnologies and cryo-CMOS circuits for silicon qubits. The research, led by a large team including Carine Jahan, Simon Martin, and Laurent Grenouillet, targets scaling non-volatile memory for advanced nodes and advancing AI, biomedical, and quantum computing applications.

CEA-Leti will present one technology paper and two additional talks at the 2026 IEEE/JSAP Symposium on VLSI Technology & Circuits, taking place June 14–18 at the Hilton Hawaiian Village in Honolulu, Hawaii. The 45th edition of this joint conference is built around the theme “Advancing the AI Frontier Through VLSI Innovation” and showcases advances across AI, machine learning, IoT, biomedical implants, edge computing, AR/VR, robotics, and autonomous vehicles.

The main contributed paper, “Engineering 3D HZO ferroelectric capacitors to scale down 22nm embedded FeRAM”, will be delivered on Wednesday, June 17, from 4:40 to 5:05 PM in Technology Technical Session T9.4 (Honolulu 1 room). A large team of CEA-Leti researchers is listed as authors: Carine Jahan, Simon Martin, Romuald Blanc, Gustav Persson, Fabien Grimaud, Mélanie Louro, Liam Hosier, Nicolo Giovannelli, Théo Monniez, Grégory Boniface, Olivier Glorieux, Christelle Boixaderas, Antonio Roman, Mehdi Oujanba, Messaoud Bedjaoui, Julien Mercier, Stéphane Minoret, Catherine Euvrard, Julian Sturm, Cécile Candegabe, Sébastien Kerdilès, Corinne Comboroure, Estelle Guyez, Stéphane Pocas, Denys Ly, Sébastien Martinie, Yann Beilliard, Gabriel Pares, Fabrice Bernard-Granger, Jean Coignus, Nicolas Bernier, Olivier Billoint, François Andrieu, and Laurent Grenouillet. The work addresses scaling challenges for hafnium-zirconium-oxide (HZO) ferroelectric capacitors within a 22‑nm embedded FeRAM technology, targeting dense, low‑power non‑volatile memory.

Two further presentations highlight CEA-Leti’s work at the intersection of hardware and emerging applications:

  • “Innovative Neurotechnologies – A Journey from the Lab to the Clinic and Back” – a joint lunch talk on Thursday, June 18, 12:15–1:15 PM in Coral 4/5, covering technology transfer in brain‑machine interfaces and clinical neurotechnology.
  • “Cryo-CMOS Circuits for the Control and Readout of Silicon Qubits” (W1‑4) – a workshop presentation on Sunday, June 14, 2:25–2:50 PM in Tapa 1, focused on cryogenic CMOS circuits for quantum computing.

In‑person attendance is complemented by on‑demand access to technical content the following week. For questions, contact Gaël Pillonnet.

Beyond the symposium, CEA‑Leti is also organizing or attending several forthcoming events: a “Organoids & Organoids‑on‑Chip” workshop at the CEA Grenoble site on September 29, 2026; the LID World Summit in Grenoble from June 23–25, 2026, featuring over 1,250 semiconductor professionals; and PCIM, where live demonstrations will include an ultra‑thin piezoelectric power converter, a smart multilevel flying‑capacitor converter, a high‑power multilevel GaN DC‑DC converter for fuel cell–battery adaptation, and predictive maintenance using non‑invasive sensors, with emphasis on CEA’s wide‑bandgap roadmap. Separately, a workshop on dry etching and plasma processing will bring together scientists and engineers in Minatec, Grenoble, while CEA‑Leti experts at booth 1 will present six papers and posters on eco‑innovation, microbumps, fan‑out wafer‑level packaging, and hybrid bonding.

Résumé
Le CEA-Leti annonce trois présentations majeures lors du Symposium VLSI 2026 à Honolulu : un article sur les mémoires ferroélectriques FeRAM avec condensateurs HZO 3D visant la gravure en 22 nm, une session sur les neurotechnologies et une autre sur les circuits cryo-CMOS pour qubits silicium, portées par une large équipe de chercheurs. Ces travaux positionnent l’institut à la pointe de l’innovation en stockage embarqué, interfaces cerveau-machine et contrôle de l’informatique quantique.

From 6/14/2026 to 6/18/2026Honolulu, Hawaii

CEA-Leti will present a paper on Ferroelectric Memories have 2 presentations : on Neurotechnologies and Cryo-CMOS Circuits.​

DISCOVER CEA-LETI’S MAJOR SCIENTIFIC RESULTS

Wednesday, June 17​​4:40 PM - 5:05 PM​Technology Technical​Session T9.4Honolulu 1​

Carine Jahan; CEA-LetiSimon Martin; CEA-LetiRomuald Blanc; CEA-LetiGustav Persson; CEA-LetiFabien Grimaud; CEA-LetiMélanie Louro; CEA-LetiLiam Hosier; CEA-LetiNicolo Giovannelli; CEA-LetiThéo Monniez; CEA-LetiGrégory Boniface; CEA-LetiOlivier Glorieux; CEA-LetiChristelle Boixaderas; CEA-LetiAntonio Roman; CEA-LetiMehdi Oujanba; CEA-LetiMessaoud Bedjaoui; CEA-LetiJulien Mercier; CEA-LetiStéphane Minoret; CEA-LetiCatherine Euvrard; CEA-LetiJulian Sturm; CEA-LetiCécile Candegabe; CEA-LetiSébastien Kerdilès; CEA-LetiCorinne Comboroure; CEA-LetiEstelle Guyez; CEA-LetiStéphane Pocas; CEA-LetiDenys Ly; CEA-LetiSébastien Martinie; CEA-LetiYann Beilliard; CEA-LetiGabriel Pares; CEA-LetiFabrice Bernard-Granger; CEA-LetiJean Coignus; CEA-LetiNicolas Bernier; CEA-LetiOlivier Billoint; CEA-LetiFrançois Andrieu; CEA-Leti​Laurent Grenouillet; CEA-Leti

T9.4 | Engineering 3D HZO ferroelectric capacitors to scale down 22nm embedded FeRAM​

Thursday, June 1812:15 PM - 1:15 PMJoint LunchCoral 4/5

Innovative Neurotechnologies – A Journey from the Lab to the Clinic and Back​

Sunday, June 142:25 PM - 2:50 PMWorkshopTapa 1

W1-4 | Cryo-CMOS Circuits for the Control and Readout of Silicon Qubits​​​

The IEEE/JSAP Symposium on VLSI Technology & Circuits has delivered a unique convergence of technology and circuits in the microelectronics industry for the last 45 years, creating maximum synergy between both domains. The 2026 Symposium is dedicated to the theme: “Advancing the AI Frontier Through VLSI Innovation.” The five-day event will be held in-person, featuring live sessions at the Hilton Hawaiian Village, Honolulu, HI, from June 14 to 18, 2026, and OnDemand access to technical sessions and other content beginning the following week. The Symposium will feature the latest VLSI technology developments, innovative circuit design, and the applications they enable, such as artificial intelligence, machine learning, IoT, wearable/implantable biomedical applications, big data, cloud/edge computing, virtual reality (VR) / augmented reality (AR), robotics, and autonomous vehicles.​

More information on ​​2026 VLSI SYMPOSIUMwebsite

From 06/14/2026 to06/18/2026​|​Honolulu, Hawaii​

Contact:  ​Gaël Pillonnet​with any questions.​​

Event | Agenda|Y-Spot Partners, Grenoble, France

We are delighted to announce that CEA is hosting the "Organoids & Organoids-on-Chip" workshop at its Grenoble site on September 29, 2026.

Event|Maison Minatec, Grenoble, France

LID World Summit from 23 to 25 June offer you a front-row seat to our most recent advances. Join more than 1,250 semiconductor industry professionals at this three-day global event and come away equipped and inspired to innovate!​

We’re excited to welcome you back to PCIM!

Join us to discover our latest innovations through live demonstrations, including:- Ultra thin power converter based on piezoelectric storage,- Smart multilevel converter utilizing flying capacitor topology- High Power multilevel GaN DCDC converter for fuel cell to battery voltages adaptation- Predictive maintenance on power electronic based on non invasive sensors.Focus will be put on CEA Wide Band Gap roadmap and technologies to address high demand and challenges on power supplies. It addresses different applications from data center to drones going through automotive, aeronautic, spatial, medical.

Event|Minatec, Grenoble, France

The workshop gathers scientists, engineers and industry partners to discuss advances and challenges in dry etching, plasma processing and related technologies for semiconductor, MEMS and emerging applications.

CEA-Leti experts will be onsite at booth 1 and available to discuss the findings of Six Papers and Posters Includes eco-innovation, microbumps, FO-WLP, packaging and hybrid bonding.

AI Insight
Core Point

CEA-Leti 将在 2026 VLSI 研讨会上展示铁电存储器、神经技术和低温 CMOS 电路三项关键进展,推动 AI 与量子计算微电子创新。

Key Players
  • CEA-Leti — 法国格勒诺布尔的微电子与纳米技术研究所,专注先进半导体研发。
Industry Impact
  • ICT: 高 — 22nm 嵌入式 FeRAM 和低温量子控制电路直接提升存储与互联密度。
  • 计算/AI: 高 — VLSI 创新为 AI 推理与训练硬件提供新架构基础。
  • 医疗健康: 中 — 神经技术从实验室走向临床,拓展可植入器件应用。
Tracking

[重点关注] — CEA-Leti 的成果可能影响下一代嵌入式内存和硅量子比特控制芯片的标准路线图。

Highlights
Upcoming Event
Related Companies
CEA-Leti
CEA-Leti mature
positive
IEEE
mature
neutral
neutral
neutral
Categories
半导体 人工智能 科研
AI Processing
2026-06-09 19:43
deepseek / deepseek-v4-pro