为明日而设计红外探测器:Baptiste Gonon-Mathieu 在 II-VI 研讨会上荣获最佳学生论文奖

Designing the Infrared Detectors of Tomorrow: Baptiste Gonon-Mathieu Wins Best Student Paper Award at the II-VI Workshop

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摘要
法国国防采购机构DGA背景的博士生Baptiste在CEA-Leti的低温红外成像实验室开展研究,聚焦InAs/InAsSb纳米超晶格红外探测器中的电子输运与各向异性,并提出基于EBIC的新测量方法,可在深度方向解耦并量化垂直/水平运动。其成果已发表在《Journal of Electronic Materials》,并在芝加哥II-VI Workshop展示;测得各向异性约2.7,显著低于预期,意味着对红外传感器成像清晰度(避免电荷横向漂移导致模糊)具有直接影响。该研究与Lynred合作推进III-V超晶格材料用于更稳定红外传感器的研发,服务于国防、工业与科学等应用。

Baptiste Gonon-Mathieu 在美国芝加哥举行的 II-VI Workshop 上凭借论文《EBIC Characterization of Vertical Transport of Minority Carriers in Gallium-Free Type-II Superlattices for Infrared Detectors》获得 Best Student Paper Award。该成果已发表于《Journal of Electronic Materials》,也是文献中少数几项直接量化这类材料各向异性的实验之一。

Baptiste 的学术路径横跨物理、电子与航天工程:他先在法国南特完成 Physics and Technology 本科,随后进入巴黎综合理工学院(École Polytechnique,Palaiseau)学习通用工程,主攻能源与电子方向;之后又在 ISAE-SUPAERO(图卢兹)专攻卫星设计,并加入法国国防部采购机构 DGA。正是在这一阶段,他决定转向博士研究,在 CEA-Leti 的冷却红外成像实验室开展物理与电子交叉领域的课题。

他的博士研究聚焦红外探测器中使用的超晶格(superlattices)电子输运机制。这类新材料由 InAs(砷化铟)和 InAsSb(锑化砷化铟)两种半导体以纳米级厚度反复堆叠而成,能够吸收入射红外辐射。研究人员怀疑它们具有很强的各向异性,即材料性质会随测量方向不同而变化,因此关键问题是弄清电子在这些结构中究竟如何移动。对于未来红外传感器而言,建立可靠的测量方法本身就是一项核心挑战。

为此,Baptiste 将 EBIC(电子束诱导电流)方法改造应用于刻蚀样品,从而把电子的垂直运动与横向运动分离开来,并结合三维模型进行分析。与传统只看表面的观察方式不同,他的方法还能在深度方向上进行测量,提供更完整的结构信息。实验结果显示,电荷的横向与垂直迁移存在约 2.7 的各向异性,明显低于预期;而这一参数对红外传感器性能至关重要,因为电子必须在正确位置被收集,才能形成清晰图像,若横向扩散过大,图像就会变得模糊。

这项工作还具有明显的产业合作背景:研究由 CEA-Leti 与 Lynred 联合推进,目标是更深入理解超晶格行为,从而开发新一代红外传感器。历史上,红外探测器主要依赖 II-VI 材料;而超晶格属于 III-V 半导体家族,是更近代的技术平台,被认为有望带来更稳定的红外传感器。红外成像的应用覆盖国防、工业和科学领域,包括监视与地球观测,因此该研究也直接服务于 Lynred 的研发活动,后者是法国红外传感器领域的重要企业。

对 Baptiste 而言,这次芝加哥国际会议还是他首次参加此类国际学术场合。由于红外研究圈子相对较小,同行彼此熟悉,年轻研究者要在这一领域建立学术存在感尤为重要。

Summary
A French PhD student, Baptiste, working at CEA-Leti’s cooled infrared imaging lab, has published a new EBIC-based measurement method to quantify electron transport anisotropy in InAs/InAsSb superlattices used for infrared detectors. Collaborating with industrial partner Lynred, the work—presented at the II-VI Workshop in Chicago—finds an anisotropy factor of about 2.7, lower than expected, which is important for predicting charge collection accuracy and image sharpness in next-generation infrared sensors. The results support the broader shift toward III-V superlattice materials, with implications for defense, industrial, and Earth-observation imaging.

After a bachelor’s degree in Physics and Technology in Nantes, Baptiste Gonon-Mathieu continued at École Polytechnique in Palaiseau, where he followed a general engineering curriculum with a focus on Energy and Electronics. He later specialized in satellite design at ISAE-SUPAERO in Toulouse and joined the French Ministry of Defence procurement agency (DGA) before deciding to pursue a PhD at the intersection of physics and electronics at CEA-Leti’s cooled infrared imaging laboratory.

His doctoral work centers on electron transport in superlattices used for infrared detectors. These structures are built by stacking nanometer-thick layers of two semiconductors, InAs and InAsSb, to absorb infrared radiation. Because researchers believe these materials are highly anisotropic — meaning their properties vary depending on direction — a major challenge is to understand how electrons actually move through them and to develop reliable measurement methods for future infrared sensors.

Baptiste adapted an EBIC-based method to etched samples, allowing him to separate vertical and lateral electron transport and analyze the results with 3D models. Unlike surface-only observations, his approach also probes the material in depth. The work, published in the Journal of Electronic Materials and presented at the II-VI Workshop in Chicago, is described as one of the first direct experiments in the literature to quantify this anisotropy.

The measurements showed an anisotropy of about 2.7, notably lower than expected. That matters because anisotropy directly affects infrared sensor performance: electrons must be collected at the right place to form a sharp image, and excessive lateral movement can blur the result. The finding therefore has practical implications for the design of next-generation infrared detectors.

This was Baptiste’s first international conference, an important milestone in a relatively small research community where scientists know one another well and young researchers need to establish visibility. His PhD is carried out in collaboration with Lynred, the laboratory’s industrial partner, with the goal of better understanding superlattice behavior and supporting the development of new infrared sensors.

The broader significance is technological as well as industrial. Infrared detectors have historically relied on II-VI materials, while superlattices belong to the more recent III-V semiconductor family and are seen as a promising route toward more stable infrared sensors. Infrared imaging has wide applications in defense, industry, and science, including surveillance and Earth observation, and this research feeds directly into Lynred’s R&D efforts as a major French player in infrared sensors.

Résumé
Baptiste, doctorant au CEA-Leti (laboratoire d’imagerie infrarouge refroidie) après un parcours en physique/électronique et un passage à la DGA, a publié dans le *Journal of Electronic Materials* une nouvelle méthode de mesure de l’anisotropie des superréseaux InAs/InAsSb via l’EBIC, avec des observations aussi en profondeur grâce à des échantillons gravés et des modèles 3D. Les mesures montrent une anisotropie d’environ 2,7, plus faible que prévu, ce qui impacte directement la performance des futurs détecteurs infrarouges (risque de flou d’image si le transport latéral est trop important). Le travail, présenté à l’II-VI Workshop à Chicago et mené en collaboration avec Lynred, vise à mieux comprendre ces matériaux pour développer des capteurs infrarouges plus stables, utiles notamment pour la défense, l’industrie et l’observation de la Terre.

News|Headlines|Success|Nomination|Profile

After completing a bachelor program in Physics and Technology in Nantes, France, Baptiste began his engineering studies at École Polytechnique (Palaiseau, France), where he followed a general engineering curriculum with a focus on Energy and Electronics. He then specialized in satellite design at ISAE-SUPAERO (Toulouse, France) and joined the French Ministry of Defence procurement agency (DGA).

It was during this time that he decided to pursue a PhD at the crossroads of physics and electronics, within CEA-Leti's cooled infrared imaging laboratory.

His research focuses on electron transport in the superlattices used in infrared detectors. These novel materials, made by repeatedly stacking nanometer-scale layers of two different semiconductors, InAs and InAsSb[1], enable infrared radiation to be absorbed.

Researchers suspect that these materials are highly anisotropic, meaning that their properties differ depending on the direction in which they are measured. The goal is therefore to understand how electrons actually move within these structures. Developing robust measurement methods is a key challenge in the development of future infrared sensors.

Baptiste adapted this method to etched samples in order to decouple the vertical and horizontal motion of electrons, and then analyzed the observations using 3D models. The distinctive feature of his approach is that observations are no longer limited to the surface but can also be performed in depth.

The results were published in the Journal of Electronic Materials and presented at the II-VI Workshop in Chicago. The paper describes a new method for measuring anisotropy using EBIC. It represents one of the first direct experiments reported in the literature to quantify this anisotropy.

Measurements of the lateral and vertical movement of charges revealed an anisotropy of approximately 2.7, significantly lower than expected. This result is particularly important because anisotropy is a key parameter determining infrared sensor performance.

Electrons must be collected at the right location to produce a sharp image. If they move too far laterally due to anisotropy, the resulting image becomes blurred.

For the PhD student, this international conference was a first. The infrared research community is relatively small, and researchers know one another well, making it important for young scientists to establish themselves.

This research is being conducted in collaboration with Lynred, as an industrial partner of the laboratory. The aim is to gain a deeper understanding of the behavior of superlattices in order to develop new infrared sensors.

Historically, infrared detectors have relied on II-VI materials. Superlattices, on the other hand, belong to the III-V semiconductor family, a more recent technology platform that holds promise for more stable infrared sensors.

Infrared imaging has applications across defense, industry, and science, including surveillance and Earth observation.

This research directly contributes to the R&D activities of Lynred, a key French player in the field of infrared sensors.

[1] InAs (indium arsenide) and InAsSb (indium arsenide-antimonide) are semiconductor materials belonging to the III-V semiconductor family.​

EBIC Characterization of Vertical Transport of Minority Carriers in Gallium-Free Type-II Superlattices for Infrared Detectors(https://doi.org/10.1007/s11664-026-12938-3)

Learn more about the conference:https://www.ii-viworkshop.org/

Learn more about Baptiste's PhD research:Link to PhD videohttps://www.youtube.com/shorts/cSxHQfSfGyk​​​

AI Insight
Core Point

法国CEA-Leti团队博士生Baptiste Gonon-Mathieu在II-VI Workshop获最佳学生论文,提出用EBIC对InAs/InAsSb超晶格红外探测器的各向异性进行三维深度测量,量化各向异性约2.7并为成像清晰度提供关键参数。

Key Players

CEA-Leti — 法国半导体与纳米器件研发机构,低温红外成像实验室(法国)

Lynred — 红外传感器与探测器工业企业(法国),与实验室合作做器件研发

DGA — 法国国防采购机构(法国),与研究生培养经历相关

II-VI Workshop — 红外材料与器件学术会议(美国芝加哥)

Industry Impact
  • Computing/AI: Low — 主要是探测器材料/表征进展,间接支撑成像数据质量
  • ICT: Medium — 红外探测器性能参数(各向异性)直接影响成像与传感可靠性
  • Terminals/Consumer Electronics: Low — 更偏防务/工业/科研成像,消费端影响间接
  • Energy: Low — 无直接能源应用指向
  • Automotive: Medium — 红外成像可用于车载感知,但本文偏基础材料表征
Tracking

Monitor — 各向异性定量与深度EBIC表征方法若可规模化,将显著影响下一代红外探测器设计与良率。

Highlights
Tech Breakthrough Local Research Upcoming Event
Categories
半导体 航空航天 科研
AI Processing
2026-09-03 23:03
openai / gpt-5.4-nano